Tai-Yuan Lin

Associate Professor

Ph. D., Physics, National Taiwan University (1999)

Mail: Tylin@mail.ntou.edu.tw

 

Specialty


	Experimental Semiconductor Physics、Fabrications of Optoelectronic Semiconductors


Major Research Areas


	(1)Optical and electrical properties of semiconductor materials
                (2)Fabrications of low-dimensional semiconductors
                (3)Semiconductor lightening light emitting diodes

 
Publications

Refereed Papers

Papers in review or in revision (*corresponding author)

 

Papers accepted or published (*corresponding author)

1.      T. Y. Lin*, D. Y. Lyu, J. Chang, J. L. Shen and W. C. Chou, “Properties of photoluminescence in type-II ZnTe/ZnSe quantum dots”, Appl. Phys. Lett., (in press) (2006)

2.      H. Y. Lin, Y. F. Chen, T. Y. Lin, C. F. Shih, K. S. Liu and N. C. Chen, “Direct evidence of compositional pulling effect in AlxGa1−xN epilayers”, J. Crystal. Growth (in press) (2006)

3.      W. S. Su, C. W. Lu, Y. F. Chen, T. Y. Lin , E. H. Lin, C. A. Chang, N. C. Chen, P. H. Chang, C. F. Shih, and K. S. Liu, “Light induced electrostatic force spectroscopy: Application to local electronic transitions in InN epifilms”, J. Appl. Phys. 99, 053518 (2006)

4.      T. Y. Lin, Y. M. Sheu, Y. F. Chen, “Origin of blue-band emission from Mg-doped AlGaN/ GaN Superlattices”, Appl. Phys. Lett. 88, 081912 (2006)

5.      J. S. Hwang, Z. S. Hu, Z. Y. You, T. Y. Lin, C. L. Hsiao, and L. W. Tu, “Local oxidation of InN and GaN using an atomic force microscope”, Nanotechnology 17, 859 (2006)

6.      Y. Y. Lin, C. W. Chen, J. Chang, T. Y. Lin, I. S. Liu, and W. F. Su, ”Exciton dissociation and migration in enhanced order conjugated polymer/nanoparticle hybrid materials”, Nanotechnology 17, 1260 (2006)

7.      C. L. Wang, J. R. Gong, W. T. Liao, W. L. Wang, T. Y. Lin, C. K. Lin, “On the characteristics of AlGaN films grown on (111) and (001) Si substrates”, Solid. State. Commun. 137, 63(2006)

8.      W. T. Liao, J. R. Gong, S. W. Lin, C. L. Wang, T. Y. Lin, K. C. Chen, Y. C. Cheng, W. J. Lin,  “Growth of AlGaN and GaN films on (11-20) Al2O3 substrates and the influence of V/III ratio on the properties of GaN films”, J. Crystal. Growth 286, 28 (2006)

9.      Y. L. Tsai , J. R. Gong, T. Y. Lin, H. Y. Lin, Y. F. Chen, and K. M. Lin, “Morphological and luminescent characteristics of GaN dots deposited on AlN by alternate supply of TMG and NH3“, Appl. Sur, Sci. 252, 3454 (2006)

10.  C. L. Wang, J. R. Gong, W. T. Liao, C. K Lin, and T. Y. Lin, “Deposition of AlGaN films on (111) Si substrates and optimization of GaN growth on Si using intermediate-temperature AlGaN buffer layers”, Thin Solid Films, 493,135(2005)

11.  H. J. Chang, C. H. Chen, Y. F. Chen, T. Y. Lin, L. C. Chen, K. H. Chen and Z. H. Lan, “Response to “Comment on ‘Direct evidence of nanocluster-induced luminescence in InGaN epifilms’ ”[Appl. Phys. Lett. 87, 136101(2005)], Appl. Phys. Lett. 87, 136102(2005)

12.  Y. C. Lee, Y. L. Liu, C. K. Wang, J. L. Shen, P. W. Cheng, C. F. Cheng, C.H. Ko and T. Y. Lin, “Decay dynamics of blue–green luminescence in meso-porous MCM-41 nanotubes”, Journal of Luminescence 113, 258 (2005)

13.  B. H. Shih, J. R. Gong, S. W. Lin, Y. L. Tsai, W. T. Lia, T. Y. Lin, Y. T. Lee, J. G. Chang, “On the optical properties and microstructures of GaN films inserted with low-temperature Al0.8Ga0.2N interlayers”, J. Crystal. Growth 276, 362 (2005)

14.  S. K. Lin, K. T. Wu, C. P. Huang, C. T. Liang, Y. H. Chang, Y. F. Chen, P. H. Chang, N. C. Chen, C. A. Chang, H. C. Peng, C. F. Shih, K. S. Liu, and T. Y. Lin,, “Electron transport in In-rich In xGa1- xN films”, J. Appl. Phys. 97, 046101(2005)

15.  H. J. Chang, C. H. Chen, Y. F. Chen, T. Y. Lin, L. C. Chen, K. H. Chen, and Z. H. Lan, “Direct evidence of nanocluster-induced luminescence in InGaN epifilms“, Appl. Phys. Lett. 86, 021911 (2005)

16.  H. J. Chang, C. H. Chen, L. Y. Huang, Y. F. Chen, and T. Y. Lin, “In-plane optical anisotropy in InxGa1-xN/GaN multiple quantum wells induced by Pockels effect”, Appl. Phys. Lett. 86, 011924 (2005)

17.  Y. C. Lee 2, Y. L. Liu, W. Z. Lee, C. K. Wang, J. L. Shen, P. W. Cheng, C. F. Cheng, and T. Y. Lin, ”Temperature-dependent photoluminescence in meso-porous MCM nanotubes”, Phys. Stat. Sol. (a) 201, 3188(2004)

18.  C. A. Chang, C. F. Shih, N. C. Chen, T. .Y. Lin  and K. S. Liu, “ In-rich In1-xGaxN films by metal-organic vapor phase epitaxy”,  Appl. Phys. Lett. 85, 6131(2004)

19.  J. P. Chang, T. Y. Lin*, H. F. Hong, T. C. Gunng, J. L. Shen, Y. F. Chen,”Effects of proton irradiations on GaN-based materials”, Physica Status Solidi (c), 1, 2466(2004)

20.  T. Y. Lin*, Y. M. Sheu, Y. F. Chen, J. Y. Lin and H. X. Jiang, “Optical properties of GaN/AlN multiple quantum wells”, Solid. State. Commun. 131, 389(2004)

21.  T. Y. Lin*, W. S. Su, W. S. Su, and Y. F. Chen, “Investigation of surface properties of Si-doped GaN films by electric force microscopy and photoluminescence”, Solid. State. Commun. 130, 49 (2004)

22.  J. R. Gong, C.W. Huang, S. F. Tseng, T. Y. Lin, K. M. Lin, W. T. Liao, Y. L. Tsai, B. H. Shi, and C. L. Wang, “Behaviors of AlxGa1-xN (0.5<x<1.0)/GaN short period strained-layer superlattices on the threading dislocation density reduction in GaN films”, J. Crystal. Growth, 260, 73 (2004)

23.  J. R. Gong, S. F. Tseng, C. W. Huang, Y. L. Tsai, W. T. Liao, C. L. Wang, B. H. Shi, and T. Y. Lin, “Effects of Al-containing Intermediate III-nitride Strained Multilayers on the Threading Dislocation Density and Optical Properties of GaN Films”, Jpn. J. Appl. Phys. 42, 6823(2003)

24.  C. H. Chen, W. H. Chen, Y. F. Chen and T. Y. Lin, “Piezoelectric, electro-optical, and photoelastic effectsin InxGa1-xN/GaN multiple quantum wells”., Appl. Phys. Lett, 83, 1770 (2003)

25.  T. Y. Lin*, “Converse piezoelectric effect and photoelastic effect in InGaN/GaN multiple quantum wells”, Appl. Phys. Lett, 82, 880 (2003)

26.  C. H. Chen, L. Y. Huang, Y. F. Chen, T. Y. Lin,” In-plane crystal orientation effect on optical parameters in InGaN/GaN multiple quantum wells”, Phys Stat Soli (c) 0, 284,(2002)

27.  M. H. Ya, W. Z. Cheng, Y. F. Chen, and T. Y. Lin “Upside-down tuning of light- and heavy-hole states in GaNAs/GaAs single quantum wells by thermal expansion and quantum confinement”, Appl. Phys. Lett. 81, 3386(2002)

28.  J. R. Gong, C. L. Yeh, Y. L. Tsai, C. L. Wang, T. Y. Lin, W. H. Lan, Y. D. Shiang, Y. T. Cherng, “ Influence of AlN/GaN strained multi-layers on the threading dislocations in GaN films grown by alternate supply of metalorganics and NH3”, Mater. Sci. Eng. B, 94, 155(2002)

29.  H. C. Yang, T. Y. Lin, Y. F. Chen “Persistent photoconductivity in InGaN/GaN multiple quantum wells”, Appl. Phys. Lett. 78, 338(2001)

30.  H. C. Yang, T. Y. Lin, and Y. F. Chen, “Nature of the 2.8-eV photoluminescence band in Si-doped GaN”, Phys. Rev. B 62, 12593(2000)

31.  Y. F. Chen, T. Y. Lin, and H. C. Yang, “ Exciton localization and the Stokes shift in undoped InGaN/GaN multi-quantum wells”, Proc. SPIE, 3938, 137(2000) [invited paper]

32.  H. C. Yang, P. F. Kuo, T. Y. Lin, Y. F. Ch en, K. H. Chen, L. C. Chen, and Jen- Inn Chyi,” Mechanism of luminescence in InGaN/GaN multiple quantum wells”, Appl. Phys. Lett. 76, 3712(2000)

33.  T. Y. Lin, H. C. Yang, and Y. F. Chen, “Optical quenching of the photoconductivity in n-type GaN”, J. Appl. Phys. 87, 3404(2000).

34.  H. C. Yang, T. Y. Lin, M. Y. Huang, and Y. F. Chen, “ Optical properties of Si-doped GaN films” , J. Appl. Phys. 86,6124(1999)

35.  W. K. Hung, M. Y. Chern, J. C. Fan, T. Y. Lin, and Y. F. Chen, “ Pulsed laser deposition of GaNAs on GaAs”, 74, 3951(1999)

36.  J. L. Shen, T. Y. Lin, Y. F. Chen, and Y. H. Chang,” Studies of far-infrared magneto-photoconductivity of D- centers in GaAs/AlxGa1-xAs multiple quantum wells”, Solid State Communications, 112, 675(1999)

37.  H. Y. Wang, S.C. Huang, T. Y. Yan, J. R. Gong, T. Y. Lin, and Y. F. Chen, “ Growth and characterization of GaN films on (0001) sapphire substrates by alternative supply of trimethylgallium and NH3” Mater. Sci. Eng. B 57, 218(1999)

38.  T. Y. Lin, J. C. Fan, and Y. F. Chen, “Effects of alloy potential fluctuations in InGaN epitaxial films” Semicond. Sci. Technol. 14, 406(1999)

39.  T. Y. Lin, H. M. Chen, M. S. Tsai, Y. F. Chen, F. F. Fang, C. F. Lin, and G. C. Chi, “ Two-dimensional electron gas and persistent photoconductivity in AlxGa1-xN/GaN heterostructures “, Phys. Rev. B 58, 13793(1998).

40.  T. Y. Lin, M. S. Tsai, Y. F. Chen, and F. F. Fang, “Magnetic-field-induced anomalous phase transition in p-type Si/SiGe heterojunctions “, J. Phys.: Condens. Matter 10, 9691(1998).

41.  T. Y. Lin, Y. F. Chen. W. K. Chen, and Y. S. Liu “ Effects of hydrogenation on electrical properties of InP on GaAs by the photochemical vapor deposition system”, Materials Chemistry and Physics, 33, 76(1993)

　

Conference Papers

　

1.          E. H. Lin, T. Y. Lin, P. K. Wei, N. C. Chen, C. A. Chang,“ Study of In-rich InXGa1-XN (0.6≦X≦1）films by polarization-modulated near-field scanning optical microscopy (PM-NSOM)”, Optics and Photonics Taiwan’05, Tainan, 2005.

2.          J. Chang, T. Y. Lin. H. M. Lin, “Effect of laser annealing on the emission property of mesoporous siliceous (MCM-41),” Optics and Photonics Taiwan’05, Tainan, 2005.

3.          Wei-Tsai Liao, Jyh-Rong Gong, Yu-Li Tsai, Cheng-Liang Wang, Keh-Chang Chen and Tai-Yuan Lin; “GaN Films Grown on (11-20) Sapphire Substrates Under Various V/III Ratios.”, 2005 MATERIALS RESEARCH SOCIETY SPRING MEETING, SAN FRANCISCO, CA USA, 2005

4.          Yu-Li Tsai, Jyh-Rong Gong, Kun-Ming Lin, Wei-Tsai Liao, Cheng-Liang Wang and Tai-Yuan Lin; “Characteristics of GaN Films Grown on Wet-Etched GaN.”, 2005 MATERIALS RESEARCH SOCIETY SPRING MEETING, SAN FRANCISCO, CA USA, 2005

5.          Cheng-Liang Wang, Jyh-Rong Gong, Chung-Kwei Lin, Wei-Tsai Liao, Yu-Li Tsai and Tai-Yuan Lin; “On the Properties of GaN Films Grown on (111) Si Substrates Using Intermediate Temperature AlGaN Buffer Layers.”, 2005 MATERIALS RESEARCH SOCIETY SPRING MEETING, SAN FRANCISCO, CA USA, 2005

6.          T. U. Lu, J. Chang, and T. Y. Lin*,J. L. Shen, and W. C. Chou,”Properties of photoluminescence in type-II ZnSe/ZnTe quantum dots”, Optics and Photonics Taiwan’04, Chung-Li, 2004.

7.          B. H. Shih, J. R. Gong, Y. L. Tsai, S. W. Lin, W. T. Liao, T. Y. Lin, Y. T. Lee, and J. G. Chang, “Optical and structural properties of GaN films using low-temperature Al0.8Ga0.2N interlayers”, Optics and Photonics Taiwan’04, Chung-Li, 2004.

8.          W. T. Liao, J. R. Gong, K. C. Chen, and T. Y. Lin, “Effect of V/III ratio on the morphology and optical property of GaN films grown on (11-20) Al2O3 substrates”, Optics and Photonics Taiwan’04, Chung-Li, 2004.

9.      J. P. Chang, T. Y. Lin, H. F. Hong , T. C. Gunng, J. L. Shen, and Y. F. Chen, “ Effects of proton irradiations on GaN-baesd material”, 5th International Symposium on Blue Laser and Light Emitting Diodes(ISBLLED), Korea, 2004

10.      T. L. Tseng, T. Y. LIN, P. K. Wei, H. L. Chou, and N. C. Chen, “ Mesoscale structures in InxGa1-xN films by polarization modulated near-field optical microscopy”, Annual Meeting of Chinese Physical Society, 2004

11.      J. P. Chang, T. Y. Lin, H. F. Hong, T. C. Gunng, J. L. Shen, and Y. F. Chen, “Effects of proton irradiations on GaN-based materials”, Annual Meeting of Chinese Physical Society, 2004

12.      T. Y. Lin, W. S. Su, W. S. Su, and Y. F. Chen ,“Surface properties of Si-doped GaN films”, International Semiconductor Device Research Symposium ,Washington, D.C. U.S.A. 2003.

13.      T. Y. Lin, K. M. Chen, W. S. Su, W. S. Su and Y. F. Chen, “Surface properties of Si-doped GaN films investigated by electric force microscopy”, Optics and Photonics Taiwan’03, Taipei, 2003.

14.      T. Y. Lin, C. L. Xuan, J. P. Chang, H. F. Hong, T.C. Gunng, J. L. Shen, and Y. F. Chen, “Effects of proton irradiations on InGaN/GaN light emitting diodes”, Electron Devices and Materials Symposium(EDMS), Keelung, Taiwan, 2003.

15.      張治平, 洪慧芬, 林泰源, 耿台成, 林國新, 辛華煜, “氮化鎵質子佈植之熱穩定性研究”, Electron Devices and Materials Symposium(EDMS), Keelung, Taiwan, 2003

16.      T. Y. Lin, “Converse piezoelectric effect in InGaN/GaN multiple quantum well”, Optics and Photonics Taiwan’02, Taipei, 2002

17.      Y. F. Chen, H. C. Yang, and T. Y. Lin, “Evidence of luminescence from In Clusters in InGaN/GaN quantum wells”, the 2nd Nanostructural Materials Conference, Taipei, Taiwan, 2000

18.      Y. F. Chen, H. C. Yang, and T. Y. Lin, “Luminescence mechanism in InGaN/GaN quantum wells” The 8th Asia Pacific Physics Conference, Taipei, Taiwan, 2000.

19.      Y. F. Chen and T. Y. Lin, “Exciton localization and Stokes’ shift in undoped InGaN/GaN quantum wells”, Optoelectronics 2000, San Jose, California, USA., 2000

20.      T. Y. Lin, and Y. F.Chen, “Optical quenching of the photoconductivity in n-type GaN”, 1999 Centennial Meeting of the American Physical Society, Atlanta, USA, 1999.

21.      W. K. Hung, M. Y. Chern, J. C. Fan, T. Y. Lin, and Y. F. Chen, '' Pulsed laser deposition of GaAsN on GaAs'', Annuel meeting of Chinese Physical Society, 1999

22.      T. Y. Lin, and Y. F.Chen, “ Optical quenching of the photoconductivity in n-type GaN”, Annual meeting of Chinese Physical Society, 1999

23.      J. R. Gong, H. Y. Wang, S.C. Huang, T. Y. Yan, T. Y. Lin, Y. F. Chen, C.I. Chiang, C. H. Lin, S.L.Tu, and H. Chang, “Growth and characterization of GaN films on (0001) and (1120) sapphire substrates”, 1998 International Symposium on Surface of Thin Film Science, Shin-Chu, TAIWAN, 1998.

24.      S. L. Hsieh, M. F. Yeh, J. R. Gong, T. Y. Lin, Y. F. Chen, C.I. Chiang, C. H. Lin, and H. Chang, “ Growth of AlGaN films on (0001) sapphire substrates by atomic layer epitaxy”, 1998 International Electron Devices and Material Symposia, TAIWAN, 1998

25.      J. S. Wang, H. H. Lin, T. Y. Lin, Y. F. Chen, W. K. Hung, and M. Y. Chern,” Epitaxial growth of the GaN film on (0001) sapphire by RF atomic nitrogen plasma assisted gas source molecular beam epitaxy”, 1998 International Electron Devices and Material Symposia, 20-23, Dec. 1998, Taiwan, B1-2-P.11

26.      T. Y. Lin, J. C. Fan, and Y. F. Chen, “Effects of alloy potential fluctuations in InGaN epitaxial films”, Annual meeting of Chinese Physical Society, 1998.

27.      H. Y. Wang, S.C. Huang, J. R. Gong, T. Y. Lin, Y. F. Chen, C. I. Chiang, and S. L. Tu, “ Growth of GaN films on (0001) sapphire substrates by atomic layer epitaxy using hydrogen carrier gas”, Electronic devicces and materials symposium, Chun-Li, TAIWAN, 1997.

28.      T. Y. Lin, M. S. Tsai, Y. F. Chen, and F. F. Fang, “ Magnetic field induced anomalous phase transition in p-type Si/SiGe heterojunctions “, The Second Joint Meeting of the World-Wide Chinese Physicists, Taipei, TAIWAN, 1997

29.      M. S. Tsai, T. Y. Lin, C. F. Huang, Y. F. Chen, C. F. Lin, G. C. Chi, and F. F. Fang, “ The transport property of 2DEG in GaN/AlGaN heterostructures “, Annual meeting of Chinese Physical Society, 1997.

30.      T. Y. Lin, M. S. Tsai, Y. F. Chen, and F. F. Fang, “ Magnetic field induced metal-insulator-metal transition in p-type Si/SiGe heterojunctions “, Annual meeting of Chinese Physical Society, 1997.

31.      M. S. Tsai, T. Y. Lin, C. F. Huang, Y. F. Chen, C. F. Lin, G. C. Chi, and F. F. Fang, “ The transport property of 2DEG in GaN/AlGaN heterostructures “, Photonics, Hsin-Chu, TAIWAN, 1996.

32.      T.Y. Lin, and Y.F. Chen, ''Hydrogenation of InP on GaAs by the photochemical vapor deposition system'', Annual Meeting of Chinese Physical Society, 1992

　

專利

1. 龔志榮，葉振隆，程亞桐，藍文厚，項裕德，林泰源，“氮化物超晶格結構對氮化鎵磊晶之品質改進”，專利公告編號 511143.

 2. 龔志榮，蔡雨利，林泰源，“固態半導體裝置用之磊晶基板，固態半導體裝置及其製作方法”，專利公告編號  I 24289